BSS138L, BVSS138L
TYPICAL ELECTRICAL CHARACTERISTICS
0.8
0.7
0.6
0.5
T J = 25 ° C
V GS = 3.5 V
V GS = 3.25 V
V GS = 3.0 V
0.9
0.8
0.7
0.6
V DS = 10 V
- 55 ° C
25 ° C
150 ° C
0.4
0.3
0.2
0.1
V GS = 2.75 V
V GS = 2.5 V
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
6
7
8
9
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
2.2
2
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
V GS = 10 V
1.25
V GS , GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
I D = 1.0 mA
1.8
1.6
1.4
1.2
1
0.8
I D = 0.8 A
V GS = 4.5 V
I D = 0.5 A
1.125
1
0.875
0.6
- 55
-5
45
95
145
0.75
- 55
-30
-5
20
45
70
95
120
145
10
T J , JUNCTION TEMPERATURE ( ° C)
Figure 3. On ? Resistance Variation with
Temperature
V DS = 40 V
T J = 25 ° C
1.0E-5
T J , JUNCTION TEMPERATURE ( ° C)
Figure 4. Threshold Voltage Variation
with Temperature
8
6
4
2
I D = 200 mA
1.0E-6
1.0E-7
1.0E-8
150 ° C
125 ° C
0
0
500
1000
1500
2000
2500
3000
1.0E-9
0
5
10
15
20
25
30
35
40
45
50
Q T , TOTAL GATE CHARGE (pC)
Figure 5. Gate Charge
http://onsemi.com
3
V DS , DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6. IDSS
相关PDF资料
BSS138TC MOSFET N-CHAN 50V SOT23-3
BSS138W-7 MOSFET N-CH 50V 200MA SC70-3
BSS138W MOSFET N-CH 50V 21MA SOT323
BSS84-7 MOSFET P-CH 50V 130MA SOT23-3
BSS84_D87Z MOSFET P-CH 50V 130MA SOT-23
BSS8402DW-7 MOSFET N+P 50,60V 130MA SC70-6
BSS84DW-7 MOSFET DUAL P-CHAN -50V SC70-6
BSS84LT1 MOSFET P-CH 50V 130MA SOT-23
相关代理商/技术参数
BSS138LT1/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 200 mAmps, 50 Volts
BSS138LT1_05 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 200 mA, 50 V N−Channel SOT−23
BSS138LT1_09 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 200 mA, 50 V
BSS138LT1_11 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 200 mA, 50 V
BSS138LT1D 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 200 mA, 50 V
BSS138LT1G 功能描述:MOSFET 50V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BSS138LT1G 制造商:ON Semiconductor 功能描述:MOSFET
BSS138LT3 功能描述:MOSFET 50V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube